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Gallium arsenide was first synthesized and studied by Victor Goldschmidt and his co-partner Donder Vwishuna in 1926 by passing arsenic vapors mixed with hydrogen over gallium(III) oxide at 600 °C. [ 7 ] [ 8 ] The semiconductor properties of GaAs and other III-V compounds were patented by Heinrich Welker at Siemens-Schuckert in 1951 [ 9 ] and ...
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The Bridgman method is a popular way of producing certain semiconductor crystals such as gallium arsenide, for which the Czochralski method is more difficult. The process can reliably produce single-crystal ingots, but does not necessarily result in uniform properties through the crystal. [1]
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Gallium arsenide antimonide, also known as gallium antimonide arsenide or GaAsSb (Ga As (1-x) Sb x), is a ternary III-V semiconductor compound; x indicates the fractions of arsenic and antimony in the alloy. GaAsSb refers generally to any composition of the alloy. It is an alloy of gallium arsenide (GaAs) and gallium antimonide (GaSb).
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
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