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Crest Audio was founded in the late 1970s by Jean-Pierre Prideaux in California. Dallas Music Industries (DMI) acquired Crest Audio in the 1980s and subsequently, Crest Audio was acquired by Peavey Electronics in 1999, [1] and has since been based in Meridian, Mississippi. The company has an international network of distributors. [2]
IEEE 200-1975 or "Standard Reference Designations for Electrical and Electronics Parts and Equipments" is a standard that was used to define referencing naming systems for collections of electronic equipment. IEEE 200 was ratified in 1975. The IEEE renewed the standard in the 1990s, but withdrew it from active support shortly thereafter.
TO-XX: wide range of small pin count packages often used for discrete parts like transistors or diodes. TO-3: Panel-mount with leads; TO-5: Metal can package with radial leads; TO-18: Metal can package with radial leads; TO-39; TO-46; TO-66: Similar shape to the TO-3 but smaller; TO-92: Plastic-encapsulated package with three leads
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It was acquired by McGraw-Hill in 1990, at which time it published books in 12 fields including computing, electronics, aviation, engineering, maritime, and several how-to subjects, [2] [3] including such diverse titles as The Complete Guide to Single Engine Cessnas, [4] The Complete Shortwave Listener's Handbook, [5] Constructing and ...
The following is a list of LM-series integrated circuits. Many were among the first analog integrated circuits commercially produced since late 1965; [1] some were groundbreaking innovations [opinion]. As of 2007, many are still being used. [2] The LM series originated with integrated circuits made by National Semiconductor.
2003 - d&b launch the Q-Series and the D12 amplifier. 2004 - d&b audiotechnik launches the Cardioid Subwoofer Array and the ROPE C software to provide central control and monitoring of the systems. 2006 - The launch of the J-Series 2007 - Launch of the R1 Remote control software 2008 - A new office building and factory opens 2010 - Launch of ...
QBD is the term applied to the charge-to-breakdown measurement of a semiconductor device. It is a standard destructive test method used to determine the quality of gate oxides in MOS devices. It is equal to the total charge passing through the dielectric layer (i.e. electron or hole fluence multiplied by the elementary charge) just before failure.