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An external memory interface is a bus protocol for communication from an integrated circuit, such as a microprocessor, to an external memory device located on a circuit board. The memory is referred to as external because it is not contained within the internal circuitry of the integrated circuit and thus is externally located on the circuit board.
The external memory on the right is unbounded. External memory algorithms are analyzed in an idealized model of computation called the external memory model (or I/O model, or disk access model). The external memory model is an abstract machine similar to the RAM machine model, but with a cache in addition to main memory.
A 64 bit memory chip die, the SP95 Phase 2 buffer memory produced at IBM mid-1960s, versus memory core iron rings 8GB DDR3 RAM stick with a white heatsink Random-access memory ( RAM ; / r æ m / ) is a form of electronic computer memory that can be read and changed in any order, typically used to store working data and machine code .
Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The static qualifier differentiates SRAM from dynamic random-access memory (DRAM):
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
One of the two plates is a permanent magnet set to a particular polarity; the other plate's magnetization can be changed to match that of an external field to store memory. This configuration is known as a magnetic tunnel junction (MTJ) and is the simplest structure for an MRAM bit. A memory device is built from a grid of such "cells".
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