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Ion sources are fundamental to ion milling. Their design and operation are crucial to producing accurate results. The most commonly used ion source relies on radiofrequency (RF) ion sources and direct current (DC) electric fields to generate and accelerate ions from a gas, typically a noble gas like argon or xenon.
Another ion source seen in commercially available instruments is a helium ion source, which is inherently less damaging to the sample than Ga ions although it will still sputter small amounts of material especially at high magnifications and long scan times. As helium ions can be focused into a small probe size and provide a much smaller sample ...
An ion beam is a beam of ions, a type of charged particle beam. Ion beams have many uses in electronics manufacturing (principally ion implantation) and other industries. There are many ion beam sources, some derived from the mercury vapor thrusters developed by NASA in the 1960s. The most widely used ion beams are of singly-charged ions.
In electronics, a cross section, cross-section, or microsection, is a prepared electronics sample that allows analysis at a plane that cuts through the sample.It is a destructive technique requiring that a portion of the sample be cut or ground away to expose the internal plane for analysis.
Ion implantation setup with mass separator. Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy or using radiofrequency, and a target chamber, where the ions impinge on a target, which is the material to be implanted.
Cross section is a measure of the probability of a fusion event, which is based on the plasma temperature; Energy per reaction is the energy released in each fusion reaction; This equation is typically averaged over a population of ions which has a normal distribution. The result is the amount of energy being created by the plasma at any ...
In DRIE, the substrate is placed inside a reactor, and several gases are introduced. A plasma is struck in the gas mixture which breaks the gas molecules into ions. The ions are accelerated towards, and react with the surface of the material being etched, forming another gaseous element. This is known as the chemical part of the reactive ion ...
Another method is ion-beam-induced deposition (IBID), where a focused ion beam is applied instead. Precursor materials are typically liquid or solid and gasified prior to deposition, usually through vaporization or sublimation, and introduced, at accurately controlled rate, into the high-vacuum chamber of the electron microscope. Alternatively ...