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In semiconductor electronics, Dennard scaling, also known as MOSFET scaling, is a scaling law which states roughly that, as transistors get smaller, their power density stays constant, so that the power use stays in proportion with area; both voltage and current scale (downward) with length.
Every time the temperature sensing network determines that a rise above the specified junction temperature (), is imminent, measures such as clock gating, clock stretching, clock speed reduction and others (commonly referred to as thermal throttling) are applied to prevent the temperature to raise further. If the applied mechanisms are not ...
If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that ...
Thermal Conductivity: Theory, Properties, and Applications. Springer Science & Business Media. ISBN 978-0-306-48327-1. Younes Shabany (2011). Heat Transfer: Thermal Management of Electronics. CRC Press. ISBN 978-1-4398-1468-0. Xingcun Colin Tong (2011). Advanced Materials for Thermal Management of Electronic Packaging. Springer Science ...
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]
thermal triggering; light triggering; Forward-voltage triggering occurs when the anode–cathode forward voltage is increased with the gate circuit opened. This is known as avalanche breakdown, during which junction J2 will break down. At sufficient voltages, the thyristor changes to its on state with low voltage drop and large forward current.
This can lead to thermal runaway and the destruction of the MOSFET even when it is operating within its Vds, Id and Pd ratings. [ 5 ] [ 6 ] Some (usually expensive) MOSFETs are specified for operation in the linear region and include DC SOA diagrams, e.g. IXYS IXTK8N150L.