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Schematic illustration of one reaction cycle of the ALD process, using the trimethylaluminium (TMA) -water process to make thin aluminium oxide films as (simplified) example. There, the starting surface contains hydroxyls (OH groups) as reactive sites; Step 1 is the reaction of TMA; Step 2 is a purge or evacuation step, Step 3 is the reaction ...
Hafnium(IV) oxide is the inorganic compound with the formula HfO 2. Also known as hafnium dioxide or hafnia, this colourless solid is one of the most common and stable compounds of hafnium. It is an electrical insulator with a band gap of 5.3~5.7 eV. [2] Hafnium dioxide is an intermediate in some processes that give hafnium metal. Hafnium(IV ...
Atomic layer epitaxy (ALE), [1] more generally known as atomic layer deposition (ALD), [2] is a specialized form of thin film growth that typically deposit alternating monolayers of two elements onto a substrate. The crystal lattice structure achieved is thin, uniform, and aligned with the structure of the substrate.
The white hafnium(IV) oxide (HfO 2), also known as hafnium dioxide or hafnia, with a melting point of 2,812 °C and a boiling point of roughly 5,100 °C, is very similar to zirconia, but slightly more basic. [13] It is an electrical insulator with a band gap of 5.3~5.7 eV. [15] Hafnium(IV) oxide typically adopts the same structure as zirconia ...
Hafnium-based compounds are employed in gates of transistors as insulators in the 45 nm (and below) generation of integrated circuits from Intel, IBM and others. [69] [70] Hafnium oxide-based compounds are practical high-k dielectrics, allowing reduction of the gate leakage current which improves performance at such scales. [71] [72] [73]
Aluminium oxide (or aluminium(III) oxide) is a chemical compound of aluminium and oxygen with the chemical formula Al 2 O 3. It is the most commonly occurring of several aluminium oxides, and specifically identified as aluminium oxide. It is commonly called alumina and may also be called aloxide, aloxite, or alundum in various forms and ...
The Hall–Héroult process is the major industrial process for smelting aluminium. It involves dissolving aluminium oxide (alumina) (obtained most often from bauxite , aluminium 's chief ore, through the Bayer process ) in molten cryolite and electrolyzing the molten salt bath, typically in a purpose-built cell.
The Bayer process is the principal industrial means of refining bauxite to produce alumina (aluminium oxide) and was developed by Carl Josef Bayer. Bauxite, the most important ore of aluminium , contains only 30–60% aluminium oxide (Al 2 O 3 ), the rest being a mixture of silica , various iron oxides , and titanium dioxide . [ 1 ]