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Specialized types of triode ("lighthouse" tubes, with low capacitance between elements) provide useful gain at microwave frequencies. Vacuum tubes are obsolete in mass-marketed consumer electronics, having been overtaken by less expensive transistor-based solid-state devices. However, more recently, vacuum tubes have been making somewhat of a ...
Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1925. The thermionic triode, a vacuum tube invented in 1907, enabled amplified radio technology and long-distance telephony. The triode, however, was a fragile device that consumed a substantial amount of power.
Like other MOSFETs, PMOS transistors have four modes of operation: cut-off (or subthreshold), triode, saturation (sometimes called active), and velocity saturation. While PMOS logic is easy to design and manufacture (a MOSFET can be made to operate as a resistor, so the whole circuit can be made with PMOS FETs), it has several shortcomings as well.
The transistor replaced the vacuum-tube triode, also called a (thermionic) valve, which was much larger in size and used significantly more power to operate. The first transistor was successfully demonstrated on December 23, 1947, at Bell Laboratories in Murray Hill, New Jersey.
Like other MOSFETs, nMOS transistors have four modes of operation: cut-off (or subthreshold), triode, saturation (sometimes called active), and velocity saturation. NMOS AND-by-default logic can produce unusual glitches or buggy behavior in NMOS components, such as the 6502 "illegal opcodes" which are absent in CMOS 6502s.
In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device.
A TRIAC (triode for alternating current; ... The mechanism is illustrated in Figure 3. The gate current makes an equivalent NPN transistor switch on, which in turn ...
The common base current gain (or α) of a point-contact transistor is usually around 2 to 3, [4] whereas α of bipolar junction transistor (BJT) cannot exceed 1. The common emitter current gain (or β) of a point-contact transistor does not usually exceed 1, [4] whereas β of a BJT is typically between 20 and 200. Negative differential ...
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