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NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]
If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that ...
An N-MOSFET/IGBT needs a significantly positive charge (V GS > V th) applied to the gate in order to turn on. Using only N-channel MOSFET/IGBT devices is a common cost reduction method due largely to die size reduction (there are other benefits as well). However, using nMOS devices in place of pMOS devices means that a voltage higher than the ...
Figure 4: Small-signal circuit for N-channel MOSFET common-source amplifier. Figure 5: Small-signal circuit for N-channel MOSFET common-source amplifier using Miller's theorem to introduce Miller capacitance C M. Bandwidth of common-source amplifier tends to be low, due to high capacitance resulting from the Miller effect.
In electronics, the Miller effect (named after its discoverer John Milton Miller) accounts for the increase in the equivalent input capacitance of an inverting voltage amplifier due to amplification of the effect of capacitance between the amplifier's input and output terminals, and is given by
In electronics, gate capacitance is the capacitance of the gate terminal of a field-effect transistor (FET). It can be expressed as the absolute capacitance of the gate of a transistor, or as the capacitance per unit area of an integrated circuit technology, or as the capacitance per unit width of minimum-length transistors in a technology.
Similar to the GTO, the IGBT can be used to block both positive and negative voltages. Operating currents are fairly high, in excess of 1500 A and switching voltage up to 3000 V. [20] The IGBT has reduced input capacitance compared to MOSFET devices which improves the Miller feedback effect during high dv/dt turn on and turn off. [21]
The MOSFET is also capable of handling higher power than the JFET. [35] The MOSFET was the first truly compact transistor that could be miniaturised and mass-produced for a wide range of uses. [6] The MOSFET thus became the most common type of transistor in computers, electronics, [36] and communications technology (such as smartphones). [37]
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