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A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki and Yuriko Kurose when working at Tokyo Tsushin Kogyo, now known as Sony .
The current from the bias battery V b biases the diode into the center of its curve (black), where it has a negative differential resistance of r (red). The operating point and output voltage of the circuit v o is at the intersection of the tunnel diode curve and the resistor load line R (blue) .Since R < r , if the two values are close in ...
A resonant-tunneling diode (RTD) is a diode with a resonant-tunneling structure in which electrons can tunnel through some resonant states at certain energy levels. The current–voltage characteristic often exhibits negative differential resistance regions. All types of tunneling diodes make use of quantum mechanical tunneling. Characteristic ...
English: A demonstration circuit showing how a tunnel diode can amplify a signal using negative differential resistance. The DC voltage V b biases the tunnel diode TD into its negative resistance region and also supplies the power used in amplifying the signal. For stability the resistor R must be less than the diodes negative resistance r.
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Tunneling applications include the tunnel diode, [5] quantum computing, flash memory, and the scanning tunneling microscope. Tunneling limits the minimum size of devices used in microelectronics because electrons tunnel readily through insulating layers and transistors that are thinner than about 1 nm. [6]
Microwave diode reflection amplifier using a circulator. A reflection amplifier is a type of microwave amplifier circuit utilizing negative differential resistance diodes such as tunnel diodes and Gunn diodes. Negative differential resistance diodes can amplify signals, and often perform better at microwave frequencies than two-port devices.
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