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A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
In semiconductors, the band gap of a semiconductor can be of two basic types, a direct band gap or an indirect band gap. The minimal-energy state in the conduction band and the maximal-energy state in the valence band are each characterized by a certain crystal momentum (k-vector) in the Brillouin zone. If the k-vectors are different, the ...
Band-gap engineering is the process of controlling or altering the band gap of a material by controlling the composition of certain semiconductor alloys, such as GaAlAs, InGaAs, and InAlAs. It is also possible to construct layered materials with alternating compositions by techniques like molecular-beam epitaxy .
In a semiconductor or band insulator, the Fermi level is surrounded by a band gap, referred to as the band gap (to distinguish it from the other band gaps in the band structure). The closest band above the band gap is called the conduction band, and the closest band beneath the band gap is called the valence band.
In semiconductors and insulators the two bands are separated by a band gap, while in conductors the bands overlap. A band gap is an energy range in a solid where no electron states can exist due to the quantization of energy. Within the concept of bands, the energy gap between the valence band and the conduction band is the band gap. [1]
The following table lists a few values of the intrinsic carrier concentration for intrinsic semiconductors, in order of increasing band gap. Material Carrier density (1/cm 3 ) at 300K
If an energy gap exists in the band structure of a material, it is called band gap. The physical properties of semiconductors are to a large extent determined by their band gaps, but also for insulators and metals the band structure—and thus any possible band gaps—govern their electronic properties. [1] [2]
Diagram of the band gap plotted versus the lattice parameter a of the ternary alloy combinations of ZnO, CdO and MgO. Ternary compounds are one option to vary the band gap of semiconductors almost continuously over a wide energy range. This method is highly dependent on the materials as well as the growth techniques.