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The two widely used forms of modern RAM are static RAM (SRAM) and dynamic RAM (DRAM). In SRAM, a bit of data is stored using the state of a six-transistor memory cell, typically using six MOSFETs. This form of RAM is more expensive to produce, but is generally faster and requires less dynamic power than DRAM.
Although the relative speed of RAM vs. ROM has varied over time, as of 2007 large RAM chips can be read faster than most ROMs. For this reason (and to allow uniform access), ROM content is sometimes copied to RAM or shadowed before its first use, and subsequently read from RAM.
Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory ; data is lost when power is removed.
RAM (Random-access memory) – This has become a generic term for any semiconductor memory that can be written to, as well as read from, in contrast to ROM (below), which can only be read. All semiconductor memory, not just RAM, has the property of random access .
Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data ...
Synchronous graphics RAM (SGRAM) is a specialized form of SDRAM for graphics adaptors. It adds functions such as bit masking (writing to a specified bit plane without affecting the others) and block write (filling a block of memory with a single colour). Unlike VRAM and WRAM, SGRAM is single-ported.
Historical lowest retail price of computer memory and storage Electromechanical memory used in the IBM 602, an early punch multiplying calculator Detail of the back of a section of ENIAC, showing vacuum tubes Williams tube used as memory in the IAS computer c. 1951 8 GB microSDHC card on top of 8 bytes of magnetic-core memory (1 core is 1 bit.)
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a form of random-access memory similar in construction to DRAM, both use a capacitor and transistor but instead of using a simple dielectric layer the capacitor, an F-RAM cell contains a thin ferroelectric film of lead zirconate titanate [Pb(Zr,Ti)O 3], commonly referred to as PZT. The Zr/Ti atoms in ...