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The Fermi level does not necessarily correspond to an actual energy level (in an insulator the Fermi level lies in the band gap), nor does it require the existence of a band structure. Nonetheless, the Fermi level is a precisely defined thermodynamic quantity, and differences in Fermi level can be measured simply with a voltmeter.
In the case of a degenerate semiconductor, an electron from the top of the valence band can only be excited into conduction band above the Fermi level (which now lies in conduction band) since all the states below the Fermi level are occupied states. Pauli's exclusion principle forbids excitation into these occupied states. Thus we observe an ...
The electronic structure of a half-metal. is the Fermi level, () is the A half-metal is any substance that acts as a conductor to electrons of one spin orientation, but as an insulator or semiconductor to those of the opposite orientation.
E F or μ: Although it is not a band quantity, the Fermi level (total chemical potential of electrons) is a crucial level in the band diagram. The Fermi level is set by the device's electrodes. For a device at equilibrium, the Fermi level is a constant and thus will be shown in the band diagram as a flat line. Out of equilibrium (e.g., when ...
This page was last edited on 28 March 2010, at 21:04 (UTC).; Text is available under the Creative Commons Attribution-ShareAlike 4.0 License; additional terms may ...
The shade follows the Fermi–Dirac distribution (black: all states filled, white: no state filled). In metals and semimetals the Fermi level E F lies inside at least one band. In insulators and semiconductors the Fermi level is inside a band gap ; however, in semiconductors the bands are near enough to the Fermi level to be thermally populated ...
A quasi Fermi level is a term used in quantum mechanics and especially in solid state physics for the Fermi level (chemical potential of electrons) that describes the population of electrons separately in the conduction band and valence band, when their populations are displaced from equilibrium.
The Fermi level pinning effect is strong in many commercially important semiconductors (Si, Ge, GaAs), [5] and thus can be problematic for the design of semiconductor devices. For example, nearly all metals form a significant Schottky barrier to n -type germanium and an ohmic contact to p -type germanium, since the valence band edge is strongly ...