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Modern computer memory is implemented as semiconductor memory, [5] [6] where data is stored within memory cells built from MOS transistors and other components on an integrated circuit. [7] There are two main kinds of semiconductor memory: volatile and non-volatile. Examples of non-volatile memory are flash memory and ROM, PROM, EPROM, and ...
Typically, a memory device attached to a computer accepts addresses starting at zero, and so a system with more than one such device would have ambiguous addressing. To resolve this, the memory logic will contain several aperture selectors , each containing a range selector and an interface to one of the memory devices.
These use from 1 to 4 device pins and allow devices to use packages with 8 pins or less. A typical EEPROM serial protocol consists of three phases: OP-code phase, address phase and data phase. The OP-code is usually the first 8 bits input to the serial input pin of the EEPROM device (or with most I²C devices, is implicit); followed by 8 to 24 ...
Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip .
FeRAM's advantages over Flash include: lower power usage, faster write speeds [2] and a much greater maximum read/write endurance (about 10 10 to 10 15 cycles). [ 3 ] [ 4 ] FeRAMs have data retention times of more than 10 years at +85 °C (up to many decades at lower temperatures).
Flash memory devices impose no seek latency. Wear leveling: flash memory devices tend to wear out when a single block is repeatedly overwritten; flash file systems are designed to spread out writes evenly. Log-structured file systems have all the desirable properties for a flash file system. [1] Such file systems include JFFS2 and YAFFS.
5D optical data storage (also branded as Superman memory crystal, [1] a reference to the Kryptonian memory crystals from the Superman franchise) is an experimental nanostructured glass for permanently recording digital data using a femtosecond laser writing process. [2]
Page mode DRAM was in turn later improved with a small modification which further reduced latency. DRAMs with this improvement are called fast page mode DRAMs (FPM DRAMs). In page mode DRAM, the chip does not capture the column address until CAS is asserted, so column access time (until data out was valid) begins when CAS is asserted.