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  2. Current–voltage characteristic - Wikipedia

    en.wikipedia.org/wiki/Current–voltage...

    Tunnel diodes and Gunn diodes are examples of components that have negative resistance. Hysteresis vs single-valued: Devices which have hysteresis; that is, in which the current–voltage relation depends not only on the present applied input but also on the past history of inputs, have I–V curves consisting of families of closed loops. Each ...

  3. Blocking oscillator - Wikipedia

    en.wikipedia.org/wiki/Blocking_oscillator

    When the absorber is in the primary circuit, e.g. a Zener diode (or LED) with voltage V z connected "backwards" across the primary windings, the current waveshape is a triangle with the time t open determined by the formula I p = I peak,m - V z ×T open /L p, here I peak,m being the primary current at the time the switch opens. When the ...

  4. Power semiconductor device - Wikipedia

    en.wikipedia.org/wiki/Power_semiconductor_device

    Some common power devices are the power MOSFET, power diode, thyristor, and IGBT. The power diode and power MOSFET operate on similar principles to their low-power counterparts, but are able to carry a larger amount of current and are typically able to withstand a larger reverse-bias voltage in the off-state .

  5. Active rectification - Wikipedia

    en.wikipedia.org/wiki/Active_rectification

    The constant voltage drop of a standard p-n junction diode is typically between 0.7 V and 1.7 V, causing significant power loss in the diode. Electric power depends on current and voltage: the power loss rises proportional to both current and voltage. In low voltage converters (around 10 volts and less), the voltage drop of a diode (typically

  6. LDMOS - Wikipedia

    en.wikipedia.org/wiki/LDMOS

    The silicon-based RF LDMOS (radio-frequency LDMOS) is the most widely used RF power amplifier in mobile networks, [2] [3] [4] enabling the majority of the world's cellular voice and data traffic. [5] LDMOS devices are widely used in RF power amplifiers for base-stations as the requirement is for high output power with a corresponding drain to ...

  7. Diode modelling - Wikipedia

    en.wikipedia.org/wiki/Diode_modelling

    The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).

  8. DO-204 - Wikipedia

    en.wikipedia.org/wiki/DO-204

    The DO-35 (also known as DO-204-AH or SOD27) is a semiconductor package used to encapsulate signal diodes (i.e., diodes meant to handle small amounts of current and voltage). [ 10 ] [ 13 ] [ 2 ] It is often used to package small signal, low power diodes such as 1N4148 (a 100 V, 300 mA silicon diode.)

  9. 1N400x rectifier diode - Wikipedia

    en.wikipedia.org/wiki/1N400x_rectifier_diode

    1N4001 diode in DO-41 axial package (through hole mount) A schematic symbol for general-purpose silicon rectifier diodes Current-voltage characteristics of a 1N4001 at different temperatures The 1N400x (or 1N4001 or 1N4000 [ 1 ] ) series is a family of popular one- ampere general-purpose silicon rectifier diodes commonly used in AC adapters for ...

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