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The two widely used forms of modern RAM are static RAM (SRAM) and dynamic RAM (DRAM). In SRAM, a bit of data is stored using the state of a six- transistor memory cell , typically using six MOSFETs. This form of RAM is more expensive to produce, but is generally faster and requires less dynamic power than DRAM.
Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The static qualifier differentiates SRAM from dynamic random-access memory (DRAM):
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
The operating system will place actively used data in RAM, which is much faster than hard disks. When the amount of RAM is not sufficient to run all the current programs, it can result in a situation where the computer spends more time moving data from RAM to disk and back than it does accomplishing tasks; this is known as thrashing.
In computing, a memory module or RAM stick is a printed circuit board on which memory integrated circuits are mounted. [1] Memory modules permit easy installation and replacement in electronic systems, especially computers such as personal computers, workstations, and servers. The first memory modules were proprietary designs that were specific ...
The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory (such as EPROM, EEPROM and flash memory) uses floating-gate memory cells, which consist of a single floating-gate transistor per ...
Modern random-access memory (RAM) uses MOS field-effect transistors (MOSFETs) as flip-flops, along with MOS capacitors for certain types of RAM. The SRAM memory cell is a type of flip-flop circuit, typically implemented using MOSFETs. These require very low power to maintain the stored value when not being accessed.
In computer science, random-access machine (RAM or RA-machine) is a model of computation that describes an abstract machine in the general class of register machines. The RA-machine is very similar to the counter machine but with the added capability of 'indirect addressing' of its registers.