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Electron-beam physical vapor deposition, or EBPVD, is a form of physical vapor deposition in which a target anode is bombarded with an electron beam given off by a charged tungsten filament under high vacuum. The electron beam causes atoms from the target to transform into the gaseous phase.
Sputter deposition: a glow plasma discharge (usually localized around the "target" by a magnet) bombards the material sputtering some away as a vapor for subsequent deposition. Pulsed electron deposition: a highly energetic pulsed electron beam ablates material from the target generating a plasma stream under nonequilibrium conditions.
Evaporation is a common method of thin-film deposition. The source material is evaporated in a vacuum. The vacuum allows vapor particles to travel directly to the target object (substrate), where they condense back to a solid state. Evaporation is used in microfabrication, and to make macro-scale products such as metallized plastic film.
Electron-beam machining is a process in which high-velocity electrons are concentrated into a narrow beam with a very high planar power density. The beam cross-section is then focused and directed toward the work piece, creating heat and vaporizing the material. Electron-beam machining can be used to accurately cut or bore a wide variety of metals.
Topological insulators can be grown using different methods such as metal-organic chemical vapor deposition (MOCVD), [67] physical vapor deposition (PVD), [68] solvothermal synthesis, [69] sonochemical technique [70] and molecular beam epitaxy. Schematic of the components of a MBE system (MBE). [34] MBE has so far been the most common ...
Electron-beam-induced deposition (EBID) is a process of decomposing gaseous molecules by an electron beam leading to deposition of non-volatile fragments onto a nearby substrate. The electron beam is usually provided by a scanning electron microscope , which results in high spatial accuracy (potentially below one nanometer) and the possibility ...
Molecular-beam epitaxy takes place in high vacuum or ultra-high vacuum (10 −8 –10 −12 Torr).The most important aspect of an MBE process is the deposition rate (typically less than 3,000 nm per hour) that allows the films to grow epitaxially (in layers on top of the existing crystal).
Sputter deposition is a physical vapor deposition (PVD) method of thin film deposition by the phenomenon of sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. [1] [2]