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Charge carrier density, also known as carrier concentration, denotes the number of charge carriers per volume. In SI units, it is measured in m −3. As with any density, in principle it can depend on position. However, usually carrier concentration is given as a single number, and represents the average carrier density over the whole material.
Crystalline solids and molecular solids are two opposite extreme cases of materials that exhibit substantially different transport mechanisms. While in atomic solids transport is intra-molecular, also known as band transport, in molecular solids the transport is inter-molecular, also known as hopping transport.
Free carrier concentration is the concentration of free carriers in a doped semiconductor. It is similar to the carrier concentration in a metal and for the purposes of calculating currents or drift velocities can be used in the same way. Free carriers are electrons that have been introduced into the conduction band (valence band) by doping ...
N dop is the net density of dopants (either donors or acceptors). When doping profiles exceed the Debye length, majority carriers no longer behave according to the distribution of the dopants. Instead, a measure of the profile of the doping gradients provides an "effective" profile that better matches the profile of the majority carrier density.
However, trap-assisted recombination can also dominate in direct bandgap materials under conditions of very low carrier densities (very low level injection) or in materials with high density of traps such as perovskites. The process is named after William Shockley, William Thornton Read [9] and Robert N. Hall, [10] who published it in 1952.
Mathematical Tables from Handbook of Chemistry and Physics was originally published as a supplement to the handbook up to the 9th edition (1952); afterwards, the 10th edition (1956) was published separately as CRC Standard Mathematical Tables. Earlier editions included sections such as "Antidotes of Poisons", "Rules for Naming Organic Compounds ...
From the kinetic theory of gases, [20] thermal conductivity of principal carrier i (p, e, f and ph) is =,, where n i is the carrier density and the heat capacity is per carrier, u i is the carrier speed and λ i is the mean free path (distance traveled by carrier before an scattering event). Thus, the larger the carrier density, heat capacity ...
An oscillation in the conductivity of a material that occurs at low temperatures in the presence of very intense magnetic fields, the Shubnikov–de Haas effect (SdH) is a macroscopic manifestation of the inherent quantum mechanical nature of matter.