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A thin-film transistor (TFT) is a special type of field-effect transistor (FET) where the transistor is made by thin film deposition. TFTs are grown on a supporting (but non-conducting) substrate , such as glass .
In February 1957, John Wallmark of RCA filed a patent for a thin film MOSFET. Paul K. Weimer, also of RCA, implemented Wallmark's ideas and developed the thin-film transistor (TFT) in 1962, a type of MOSFET distinct from the standard bulk MOSFET. It was made with thin films of cadmium selenide and cadmium sulfide.
The concept of a thin-film transistor (TFT) was first proposed by John Wallmark who in 1957 filed a patent for a thin film MOSFET in which germanium monoxide was used as a gate dielectric. Thin-film transistor was developed in 1962 by Paul K. Weimer who implemented Wallmark's ideas. [16] The TFT is a special type of MOSFET. [17]
An oxide thin-film transistor (oxide TFT) or metal oxide thin film transistor is a type of thin film transistor where the semiconductor is a metal oxide compound. An oxide TFT is distinct from a metal oxide field effect transistor ( MOSFET ) where the word "oxide" refers to the insulating gate dielectric (normally silicon dioxide ).
In 1966, T. P. Brody and H. E. Kunig at Westinghouse Electric fabricated enhancement- and depletion-mode indium arsenide (InAs) MOS thin-film transistors (TFTs). [5] [6] In 2022, the first dual-mode organic transistor that behaves in both depletion mode and enhancement mode was reported by a team at University of California-Santa Barbara. [7]
As a result, IGZO-TFT can improve the speed, resolution and size of flat-panel displays. It is currently used as the thin-film transistors for use in organic light-emitting diode (OLED) TV displays. IGZO-TFT and its applications are patented by JST. [4] They have been licensed to Samsung Electronics [4] (in 2011) and Sharp [5] (in 2012).
A high-resolution matrix LCD with required fast response (e.g. for animated graphics and/or video) necessitates integration of additional non-linear electronic elements into each picture element of the display (e.g., thin-film diodes, TFDs, or thin-film transistors, TFTs) in order to allow active matrix-addressing of individual picture elements ...
Like a TFT-LCD display, millions of roughly 0.2 mm pixels each containing a thin-film transistor form a grid patterned in amorphous silicon on the glass substrate. [1] Unlike an LCD, but similar to a digital camera's image sensor chip, each pixel also contains a photodiode which generates an electrical signal in proportion to the light produced ...
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