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CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, / ˈ s iː m ɒ s /, also US: /-ɔː s / [1]) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [2]
In a given technology node, such as the 90-nm CMOS process, the threshold voltage depends on the choice of oxide and on oxide thickness. Using the body formulas above, V T N {\displaystyle V_{TN}} is directly proportional to γ {\displaystyle \gamma } , and t O X {\displaystyle t_{OX}} , which is the parameter for oxide thickness.
Multi-threshold CMOS (MTCMOS) is a variation of CMOS chip technology which has transistors with multiple threshold voltages (V th) in order to optimize delay or power.The V th of a MOSFET is the gate voltage where an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor.
In NMOS logic, the lower half of the CMOS circuit is used in combination with a load device or pull-up transistor (typically a depletion load or a dynamic load). AOI gates are similarly efficient in transistor–transistor logic (TTL). Examples. CMOS 4000-series logic family: CD4085B = dual 2-2 AOI gate [3] CD4086B = single expandable 2-2-2-2 ...
In general, dynamic logic greatly increases the number of transistors that are switching at any given time, which increases power consumption over static CMOS. [8] There are several powersaving techniques that can be implemented in a dynamic logic based system. In addition, each rail can convey an arbitrary number of bits, and there are no ...
The transistor channel length is smaller in modern CMOS technologies, which makes achieving high gain in single-stage amplifiers very challenging. To achieve high gain, the literature has suggested many techniques. [6] [7] [8] The following sections look at different amplifier topologies and their features.
Schematic of two stages of CMOS inverter, showing input and output voltage-time plots. I on and I off (along with I DG, I SD and I DB components) indicate technologically controlled factors. Credit: Prof. Robert Dutton in CRC Electronic Design Automation for IC Handbook, Vol II, Chapter 25, by permission.
The dynamic (switching) power consumption of CMOS circuits is proportional to frequency. [8] Historically, the transistor power reduction afforded by Dennard scaling allowed manufacturers to drastically raise clock frequencies from one generation to the next without significantly increasing overall circuit power consumption.