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Gallium arsenide was first synthesized and studied by Victor Goldschmidt and his co-partner Donder Vwishuna in 1926 by passing arsenic vapors mixed with hydrogen over gallium(III) oxide at 600 °C. [ 7 ] [ 8 ] The semiconductor properties of GaAs and other III-V compounds were patented by Heinrich Welker at Siemens-Schuckert in 1951 [ 9 ] and ...
Gallium reacts with ammonia at 1050 °C to form gallium nitride, GaN. Gallium also forms binary compounds with phosphorus, arsenic, and antimony: gallium phosphide (GaP), gallium arsenide (GaAs), and gallium antimonide (GaSb). These compounds have the same structure as ZnS, and have important semiconducting properties.
Arsenic is used as the group 15 element in the III-V semiconductors gallium arsenide, indium arsenide, and aluminium arsenide. [10] The valence electron count of GaAs is the same as a pair of Si atoms, but the band structure is completely different which results in distinct bulk properties. [11]
These compounds are mainly of academic interest. For example, "sodium arsenide" is a structural motif adopted by many compounds with the A 3 B stoichiometry. Indicative of their salt-like properties, hydrolysis of alkali metal arsenides gives arsine: Na 3 As + 3 H 2 O → AsH 3 + 3 NaOH Nickel arsenide is a common impurity in ores of nickel.
Gallium also forms binary compounds with phosphorus, arsenic, and antimony: gallium phosphide (GaP), gallium arsenide (GaAs), and gallium antimonide (GaSb). These compounds have the same structure as ZnS, and have important semiconducting properties.
Gallium arsenide antimonide, also known as gallium antimonide arsenide or GaAsSb (Ga As (1-x) Sb x), is a ternary III-V semiconductor compound; x indicates the fractions of arsenic and antimony in the alloy. GaAsSb refers generally to any composition of the alloy. It is an alloy of gallium arsenide (GaAs) and gallium antimonide (GaSb).
Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V ...
Gallium arsenide phosphide (Ga As 1−x P x) is a semiconductor material, an alloy of gallium arsenide and gallium phosphide. It exists in various composition ratios indicated in its formula by the fraction x. Gallium arsenide phosphide is used for manufacturing red, orange and yellow light-emitting diodes.