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  2. Refractive index and extinction coefficient of thin film ...

    en.wikipedia.org/wiki/Refractive_index_and...

    In this example, the reflectance spectrum of the poly-silicon was measured on a blanket area containing the poly-silicon, from which its n and k spectra were determined in accordance with the methodology described in this article that uses the Forouhi–Bloomer dispersion equations. Fixed tables of n and k values were used for the SiO 2 and Si ...

  3. List of refractive indices - Wikipedia

    en.wikipedia.org/wiki/List_of_refractive_indices

    Standard refractive index measurements are taken at the "yellow doublet" sodium D line, with a wavelength (λ) of 589 nanometers. There are also weaker dependencies on temperature , pressure / stress , etc., as well on precise material compositions (presence of dopants , etc.); for many materials and typical conditions, however, these ...

  4. Refractive index - Wikipedia

    en.wikipedia.org/wiki/Refractive_index

    Since the refractive index is a fundamental physical property of a substance, it is often used to identify a particular substance, confirm its purity, or measure its concentration. The refractive index is used to measure solids, liquids, and gases. Most commonly it is used to measure the concentration of a solute in an aqueous solution.

  5. Amorphous silicon - Wikipedia

    en.wikipedia.org/wiki/Amorphous_silicon

    Amorphous silicon (a-Si) is the non-crystalline form of silicon used for solar cells and thin-film transistors in LCDs.. Used as semiconductor material for a-Si solar cells, or thin-film silicon solar cells, it is deposited in thin films onto a variety of flexible substrates, such as glass, metal and plastic.

  6. Tauc–Lorentz model - Wikipedia

    en.wikipedia.org/wiki/Tauc–Lorentz_model

    The model has been used to fit the complex refractive index of amorphous semiconductor materials at frequencies greater than their optical band gap. The dispersion relation bears the names of Jan Tauc and Hendrik Lorentz, whose previous works [1] were combined by G. E. Jellison and F. A. Modine to create the model.

  7. Flat-panel detector - Wikipedia

    en.wikipedia.org/wiki/Flat-panel_detector

    Directly behind the scintillator layer is an amorphous silicon detector array manufactured using a process very similar to that used to make LCD televisions and computer monitors. Like a TFT-LCD display, millions of roughly 0.2 mm pixels each containing a thin-film transistor form a grid patterned in amorphous silicon on the glass substrate. [1]

  8. Low-temperature polycrystalline silicon - Wikipedia

    en.wikipedia.org/wiki/Low-temperature...

    Polycrystalline silicon (p-Si) is a pure and conductive form of the element composed of many crystallites, or grains of highly ordered crystal lattice.In 1984, studies showed that amorphous silicon (a-Si) is an excellent precursor for forming p-Si films with stable structures and low surface roughness. [2]

  9. Direct and indirect band gaps - Wikipedia

    en.wikipedia.org/wiki/Direct_and_indirect_band_gaps

    The exact reverse of radiative recombination is light absorption. For the same reason as above, light with a photon energy close to the band gap can penetrate much farther before being absorbed in an indirect band gap material than a direct band gap one (at least insofar as the light absorption is due to exciting electrons across the band gap).