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In 2013, Samsung introduced V-NAND (Vertical NAND, also known as 3D NAND) with triple-level cells, which had a memory capacity of 128 Gbit. [27] They expanded their TLC V-NAND technology to 256 Gbit memory in 2015, [24] and 512 Gbit in 2017. [28] Enterprise TLC (eTLC) is a more expensive variant of TLC that is optimized for commercial use.
In July 2016, Samsung announced the 4 TB [clarification needed] Samsung 850 EVO which utilizes their 256 Gbit 48-layer TLC 3D V-NAND. [183] In August 2016, Samsung announced a 32 TB 2.5-inch SAS SSD based on their 512 Gbit 64-layer TLC 3D V-NAND. Further, Samsung expects to unveil SSDs with up to 100 TB of storage by 2020. [184]
UFS uses NAND flash. It may use multiple stacked 3D TLC NAND flash dies (integrated circuits) with an integrated controller. [4] The proposed flash memory specification is supported by consumer electronics companies such as Nokia, Sony Ericsson, Texas Instruments, STMicroelectronics, Samsung, Micron, and SK Hynix. [5]
Charge trap flash (CTF) is a semiconductor memory technology used in creating non-volatile NOR and NAND flash memory. It is a type of floating-gate MOSFET memory technology , but differs from the conventional floating-gate technology in that it uses a silicon nitride film to store electrons rather than the doped polycrystalline silicon typical ...
As its name suggests, V-NAND boasts a vertically stacked structure with greater density than memory cells placed on a single, 2D plane. The result is more speed, up to ten times more reliability ...
Since 2013, triple-level cell (TLC) (e.g., 3D NAND) flash has been available, with cycle counts dropping to 1,000 program-erase (P/E) cycles. A lower write amplification is more desirable, as it corresponds to a reduced number of P/E cycles on the flash memory and thereby to an increased SSD life. [1]
YMTC's 3D NAND flash memory chips were the first to be domestically mass-produced in China. [11] Later in 2018, YMTC announced mass production of its 32-layer 3D NAND flash memory chip, and in September 2019, YMTC reported that it had started mass-producing its 64-layer TLC 3D NAND flash memory chip, with both chips using its Xtacking architecture.
The MicroLatency flash modules were updated to 32-layer 3D TLC NAND flash from Micron. Rather than the compression feature slowing down data access as usually happens with software based compression, the 900 continued to advertise 1.2 million I/O operations per second (IOPs) due to the hardware compression implementation and hardware only data ...
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