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Graphene doped with various gaseous species (both acceptors and donors) can be returned to an undoped state by gentle heating in vacuum. [22] [24] Even for dopant concentrations in excess of 10 12 cm −2 carrier mobility exhibits no observable change. [24] Graphene doped with potassium in ultra-high vacuum at low temperature can reduce ...
The model gives good qualitative results in many cases and can be combined with other models that give better results where the tight-binding model fails. Though the tight-binding model is a one-electron model, the model also provides a basis for more advanced calculations like the calculation of surface states and application to various kinds ...
Graphene's honeycomb structure can be viewed as two interleaving triangular lattices. This perspective has been used to calculate the band structure for a single graphite layer using a tight-binding approximation. [60]
This factor is usually in the range 0.01 to 10, but can be lower or higher—for example, reaching 1,000 in exotic heavy fermion materials, or anywhere from zero to infinity (depending on definition) in graphene. As it simplifies the more general band theory, the electronic effective mass can be seen as an important basic parameter that ...
Calculations based on tight binding theory predict that zigzag GNRs are always metallic while armchairs can be either metallic or semiconducting, depending on their width. [20] However, density functional theory (DFT) calculations show that armchair nanoribbons are semiconducting with an energy gap scaling with the inverse of the GNR width. [21]
Each model describes some types of solids very well, and others poorly. The nearly free electron model works well for metals, but poorly for non-metals. The tight binding model is extremely accurate for ionic insulators, such as metal halide salts (e.g. NaCl).
Here we give a simple derivation of the Peierls substitution, which is based on The Feynman Lectures (Vol. III, Chapter 21). [3] This derivation postulates that magnetic fields are incorporated in the tight-binding model by adding a phase to the hopping terms and show that it is consistent with the continuum Hamiltonian.
In the same year, tight-binding numerical simulations [49] demonstrated that the band-gap induced in graphene bilayer field effect transistors is not sufficiently large for high-performance transistors for digital applications, but can be sufficient for ultra-low voltage applications, when exploiting a tunnel-FET architecture.