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These characteristics are also known as I–V curves, referring to the standard symbols for current and voltage. In electronic components with more than two terminals, such as vacuum tubes and transistors, the current–voltage relationship at one pair of terminals may depend on the current or voltage on a third terminal. This is usually ...
In low voltage converters (around 10 volts and less), the voltage drop of a diode (typically around 0.7 to 1 volt for a silicon diode at its rated current) has an adverse effect on efficiency. One classic solution replaces standard silicon diodes with Schottky diodes , which exhibit very low voltage drops (as low as 0.3 volts).
As for the second, the difference between the quasi-Fermi levels at the junction, he says that we can estimate the current flowing through the diode from this difference. He points out that the current at the p terminal is all holes, whereas at the n terminal it is all electrons, and the sum of these two is the constant total current. So the ...
Various semiconductor diodes. Left: A four-diode bridge rectifier.Next to it is a 1N4148 signal diode.On the far right is a Zener diode.In most diodes, a white or black painted band identifies the cathode into which electrons will flow when the diode is conducting.
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
It is important to have Q 1 in the circuit instead of a simple diode, because Q 1 sets V BE for transistor Q 2. If Q 1 and Q 2 are matched, that is, have substantially the same device properties, and if the mirror output voltage is chosen so the collector-base voltage of Q 2 is also zero, then the V BE-value set by Q 1 results in an emitter ...
It is also worth noting that the temperature coefficient of a 4.7 V Zener diode is close to that of the emitter-base junction of a silicon transistor at around −2 mV/°C, so in a simple regulating circuit where the 4.7 V diode sets the voltage at the base of an NPN transistor (i.e. their coefficients are acting in parallel), the emitter will ...
Diffusion Capacitance is the capacitance that happens due to transport of charge carriers between two terminals of a device, for example, the diffusion of carriers from anode to cathode in a forward biased diode or from emitter to base in a forward-biased junction of a transistor. [note 1] [citation needed] In a semiconductor device with a ...