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The wafer is lifted by the wafer prober until metal pads on one or more ICs on the wafer make physical contact with the probes. A certain amount of over-travel is required after the first probe makes contact with the wafer, for two reasons: to guarantee that all probes have made contact (to account for non-planarity of the wafer)
This is a list of semiconductor fabrication plants, factories where integrated circuits (ICs), also known as microchips, are manufactured.They are either operated by Integrated Device Manufacturers (IDMs) that design and manufacture ICs in-house and may also manufacture designs from design-only (fabless firms), or by pure play foundries that manufacture designs from fabless companies and do ...
Solar cells, or photovoltaic cells (PV) for producing electric power from sunlight can be grown as thick epi wafers on a monocrystalline silicon "seed" wafer by chemical vapor deposition (CVD), and then detached as self-supporting wafers of some standard thickness (e.g., 250 μm) that can be manipulated by hand, and directly substituted for wafer cells cut from monocrystalline silicon ingots.
The package interconnects are applied on an artificial wafer made of silicon chips and a casting compound. Principle eWLB. eWLB is a further development of the classical wafer level ball grid array technology (WLB or WLP: wafer level package). The main driving force behind the eWLB technology was to allow fanout and more space for interconnect ...
Wafer fabrication is a procedure composed of many repeated sequential processes to produce complete electrical or photonic circuits on semiconductor wafers in a semiconductor device fabrication process. Examples include production of radio frequency amplifiers, LEDs, optical computer components, and microprocessors for computers. Wafer ...
On October 14, 2016, Ningbo Semiconductor International Corporation was jointly established by China IC Capital (the wholly owned investment fund of SMIC), Ningbo Senson Electronics Technology Co., Ltd, and Beijing Integrated Circuit Design and Testing Fund with a registered capital of RMB355 million, equal to US$52.8 million.
The wafers can be cleaned using H 2 O 2 + H 2 SO 4 or oxygen plasma. The cleaned wafers are rinsed with DI water and dried at elevated temperature, e.g. 100 to 200 °C for 120 min. [17] The adhesion promoter with a specific thickness is deposited, i.e. spin-coated or contact printed on the wafer to improve the bonding strength.
Warp is the difference between the maximum and the minimum distances of the median surface of a free, un-clamped wafer from the reference plane defined above. This definition follows ASTM F657, [ 2 ] and ASTM F1390.