Search results
Results from the WOW.Com Content Network
Two additional access transistors serve to control the access to a storage cell during read and write operations. 6T SRAM is the most common kind of SRAM. [20] In addition to 6T SRAM, other kinds of SRAM use 4, 5, 7, [21] 8, 9, [20] 10 [22] (4T, 5T, 7T 8T, 9T, 10T SRAM), or more transistors per bit.
The following other wikis use this file: Usage on ar.wikipedia.org خلية ذاكرة (حوسبة) Usage on ca.wikipedia.org SRAM; Lògica de transistors pas
The working principle of SRAM memory cell can be easier to understand if the transistors M1 through M4 are drawn as logic gates. That way it is clear that at its heart, the cell storage is built by using two cross-coupled inverters. This simple loop creates a bi-stable circuit.
These lead to small differences in electronic properties, such as transistor threshold voltages and gain factor. The start-up behavior of an SRAM cell depends on the difference of the threshold voltages of its transistors and other transistor parameters. An SRAM cell has two stable states, which normally represent the zero and one logical states.
What links here; Related changes; Upload file; Special pages; Permanent link; Page information; Cite this page; Get shortened URL; Download QR code
CMOS Ternary CAM cell consisting of two 6T SRAM cells plus 4 comparison transistors. Normally opposite logic levels, either '0' and '1' or '1' and '0' will be stored in the two cells. For a don't care condition '0' will be stored in both cells so that the match line ML will not be pulled low for any combination of search line (SL) data.
1T-SRAM has speed comparable to 6T-SRAM (at multi-megabit densities). It is significantly faster speed than eDRAM, and the "quad-density" variant is only slightly larger (10–15% is claimed). On most foundry processes, designs with eDRAM require additional (and costly) masks and processing steps, offsetting the cost of a larger 1T-SRAM die.
Very similar to the current 6T-SRAM, or SRAM memories with 6 cell transistors, is substantially different because the SRAM latch CMOS, consisting of 4 of the 6 transistors of each cell, is replaced by a bipolar latch PNP -NPN of a single Thyristor.