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A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki and Yuriko Kurose when working at Tokyo Tsushin Kogyo, now known as Sony .
A resonant-tunneling diode (RTD) is a diode with a resonant-tunneling structure in which electrons can tunnel through some resonant states at certain energy levels. The current–voltage characteristic often exhibits negative differential resistance regions. All types of tunneling diodes make use of quantum mechanical tunneling. Characteristic ...
Tunneling applications include the tunnel diode, [5] quantum computing, flash memory, and the scanning tunneling microscope. Tunneling limits the minimum size of devices used in microelectronics because electrons tunnel readily through insulating layers and transistors that are thinner than about 1 nm. [6]
The tunnel diode circuit (see diagram) is an example. [82] The tunnel diode TD has voltage controlled negative differential resistance. [54] The battery adds a constant voltage (bias) across the diode so it operates in its negative resistance range, and provides power to amplify the signal.
Consequently, tunnel diode logic circuits required a means to reset the diode after each logical operation. However, a simple tunnel diode gate offered little isolation between inputs and outputs and had low fan in and fan out. More complex gates, with additional tunnel diodes and bias power supplies, overcame some of these limitations. [7]
A variety of active devices can be used to implement multivibrators that produce similar harmonic-rich wave forms; these include transistors, neon lamps, tunnel diodes and others. Although cross-coupled devices are a common form, single-element multivibrator oscillators are also common. The three types of multivibrator circuits are:
In semiconductor devices, a backward diode (also called back diode [2]) is a variation on a Zener diode or tunnel diode having a better conduction for small reverse biases (for example –0.1 to –0.6 V) than for forward bias voltages. The reverse current in such a diode is by tunneling, which is also known as the tunnel effect. [3] [4] [5]
In electronics, a tunnel junction is a barrier, such as a thin insulating layer or electric potential, between two electrically conducting materials. Electrons (or quasiparticles ) pass through the barrier by the process of quantum tunnelling .