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Darlington Transistor (NPN-type) In electronics, a Darlington configuration (commonly called as a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. [1]
The top image in this section represents a typical bipolar transistor in a circuit. A charge flows between emitter and collector terminals depending on the current in the base. Because the base and emitter connections behave like a semiconductor diode, a voltage drop develops between them.
Download as PDF; Printable version; In other projects ... back-to-back to make a PNP or NPN bipolar junction transistor (BJT) equivalent. This model is theoretical ...
In this circuit, the base terminal of the transistor serves as the input, the collector is the output, and the emitter is common to both (for example, it may be tied to ground reference or a power supply rail), hence its name. The analogous FET circuit is the common-source amplifier, and the analogous tube circuit is the common-cathode amplifier.
Figure 1: Basic NPN common collector circuit (neglecting biasing details). In electronics, a common collector amplifier (also known as an emitter follower) is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies, typically used as a voltage buffer.
Figure 1: Basic NPN common base circuit (neglecting biasing details). In electronics, a common-base (also known as grounded-base) amplifier is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies, typically used as a current buffer or voltage amplifier.
The open collector transistor can be rated to withstand a higher voltage than the chip supply voltage. This technique is commonly used by logic circuits operating at 5 V or lower to drive higher voltage devices such as electric motors, LEDs in series, [8] 12 V relays, 50 V vacuum fluorescent displays, or Nixie tubes requiring more than 100 V.