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A memory bank is a part of cache memory that is addressed consecutively in the total set of memory banks, i.e., when data item a(n) is stored in bank b, data item a(n + 1) is stored in bank b + 1. Cache memory is divided in banks to evade the effects of the bank cycle time (see above) [=> missing "bank cycle" definition, above]. When data is ...
The time to read the first bit of memory from a DRAM with the wrong row open is T RP + T RCD + CL. Row Active Time T RAS: The minimum number of clock cycles required between a row active command and issuing the precharge command. This is the time needed to internally refresh the row, and overlaps with T RCD. In SDRAM modules, it is simply T RCD ...
In SDRAM chips, the memory in each chip is divided into banks which are refreshed in parallel, saving further time. So the number of refresh cycles needed is the number of rows in a single bank, given in the specifications, which in the 2012 generation of chips has been frozen at 8,192. [needs update]
At its core is a fixed-size table with the number of rows equal to the number of frames in memory. If there are 4,000 frames, the inverted page table has 4,000 rows. For each row there is an entry for the virtual page number (VPN), the physical page number (not the physical address), some other data and a means for creating a collision chain ...
For an 8-bit-wide memory chip with a 2,048 bit wide row, accesses to any of the 256 datawords (2048/8) on the row can be very quick, provided no intervening accesses to other rows occur. The drawback of the older fast column access method was that a new column address had to be sent for each additional dataword on the row.
For example, a system with 2 13 = 8,192 rows would require a staggered refresh rate of one row every 7.8 μs which is 64 ms divided by 8,192 rows. A few real-time systems refresh a portion of memory at a time determined by an external timer function that governs the operation of the rest of a system, such as the vertical blanking interval that ...
In DOS memory management, conventional memory, also called base memory, is the first 640 kilobytes of the memory on IBM PC or compatible systems. It is the read-write memory directly addressable by the processor for use by the operating system and application programs.
Also some memory controllers have a maximum supported number of ranks. DRAM load on the command/address (CA) bus can be reduced by using registered memory. [citation needed] Predating the term rank (sometimes also called row) is the use of single-sided and double-sided modules, especially with SIMMs. While most often the number of sides used to ...