enow.com Web Search

Search results

  1. Results from the WOW.Com Content Network
  2. Drain-induced barrier lowering - Wikipedia

    en.wikipedia.org/wiki/Drain-induced_barrier_lowering

    As channel length decreases, the barrier φ B to be surmounted by an electron from the source on its way to the drain reduces. Drain-induced barrier lowering (DIBL) is a short-channel effect in MOSFETs referring originally to a reduction of threshold voltage of the transistor at higher drain voltages.

  3. Reverse short-channel effect - Wikipedia

    en.wikipedia.org/wiki/Reverse_short-channel_effect

    To combat drain-induced barrier lowering (DIBL), MOSFET substrate near source and drain region are heavily doped (p+ in case of NMOS and n+ in case of PMOS) to reduce the width of the depletion region in the vicinity of source/substrate and drain/substrate junctions (called halo doping to describe the limitation of this heavy doping to the ...

  4. Channel length modulation - Wikipedia

    en.wikipedia.org/wiki/Channel_length_modulation

    Channel length modulation (CLM) is an effect in field effect transistors, a shortening of the length of the inverted channel region with increase in drain bias for large drain biases. The result of CLM is an increase in current with drain bias and a reduction of output resistance. It is one of several short-channel effects in MOSFET scaling.

  5. Subthreshold conduction - Wikipedia

    en.wikipedia.org/wiki/Subthreshold_conduction

    Subthreshold leakage in an nFET. Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage.

  6. Hot-carrier injection - Wikipedia

    en.wikipedia.org/wiki/Hot-carrier_injection

    In MOSFETs, hot electrons have sufficient energy to tunnel through the thin gate oxide to show up as gate current, or as substrate leakage current.In a MOSFET, when a gate is positive, and the switch is on, the device is designed with the intent that electrons will flow laterally through the conductive channel, from the source to the drain.

  7. Man accused of attacking Colorado reporter has had mental ...

    www.aol.com/man-accused-attacking-colorado...

    A man accused of attacking a Colorado reporter after questioning whether he was a citizen and saying “This is Trump’s America now” has had mental health issues for years, his lawyer said.

  8. GIDL - Wikipedia

    en.wikipedia.org/wiki/GIDL

    Gate-induced drain leakage, a leakage mechanism in MOSFETs due to large field effect in the drain junction Generic Interface Definition Language , an extension to CORBA IDL Topics referred to by the same term

  9. Germany probing possible security lapses after Christmas ...

    www.aol.com/news/germany-looking-possible...

    Germany searched on Monday for answers on possible security lapses after a man drove his car into a Christmas market, killing at least five people and casting a renewed spotlight on security and ...