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  2. Dynamic random-access memory - Wikipedia

    en.wikipedia.org/wiki/Dynamic_random-access_memory

    The top of the capacitor is connected to the access transistor's drain terminal via a polysilicon strap (Kenner, pp. 42–44). A trench capacitor's depth-to-width ratio in DRAMs of the mid-2000s can exceed 50:1 (Jacob, p. 357). Trench capacitors have numerous advantages.

  3. Ferroelectric RAM - Wikipedia

    en.wikipedia.org/wiki/Ferroelectric_RAM

    Ferroelectric RAM Magnetoresistive random-access memory nvSRAM BBSRAM Technique The basic storage element is a ferroelectric capacitor. The capacitor can be polarized up or down by applying an electric field [18] Similar to ferroelectric RAM, but the atoms align themselves in the direction of an external magnetic force. This effect is used to ...

  4. Memory cell (computing) - Wikipedia

    en.wikipedia.org/wiki/Memory_cell_(computing)

    The two most common types of DRAM memory cells since the 1980s have been trench-capacitor cells and stacked-capacitor cells. [25] Trench-capacitor cells are where holes (trenches) are made in a silicon substrate, whose side walls are used as a memory cell, whereas stacked-capacitor cells are the earliest form of three-dimensional memory (3D ...

  5. Semiconductor memory - Wikipedia

    en.wikipedia.org/wiki/Semiconductor_memory

    RAM (Random-access memory) – This has become a generic term for any semiconductor memory that can be written to, as well as read from, in contrast to ROM (below), which can only be read. All semiconductor memory, not just RAM, has the property of random access .

  6. EEStor - Wikipedia

    en.wikipedia.org/wiki/EEStor

    FuelPositive Corporation (formerly EEStor) [1] is a company based in Cedar Park, Texas, United States that claims to have developed a solid state polymer capacitor for electricity storage. [2] The company claims the device stores more energy than lithium-ion batteries at a lower cost than lead-acid batteries used in gasoline-powered cars.

  7. Deep reactive-ion etching - Wikipedia

    en.wikipedia.org/wiki/Deep_reactive-ion_etching

    in DRAM memory circuits, capacitor trenches may be 10–20 μm deep, in MEMS, DRIE is used for anything from a few micrometers to 0.5 mm. in irregular chip dicing, DRIE is used with a novel hybrid soft/hard mask to achieve sub-millimeter etching to dice silicon dies into lego-like pieces with irregular shapes. [7] [8] [9]

  8. Vishay Intertechnology - Wikipedia

    en.wikipedia.org/wiki/Vishay_Intertechnology

    Vishay Intertechnology, Inc. is an American manufacturer of discrete semiconductors and passive electronic components founded by Polish-born businessman Felix Zandman.Vishay has manufacturing plants in Israel, Asia, Europe, and the Americas where it produces rectifiers, diodes, MOSFETs, optoelectronics, selected integrated circuits, resistors, capacitors, and inductors.

  9. List of 7400-series integrated circuits - Wikipedia

    en.wikipedia.org/wiki/List_of_7400-series...

    In the mid-1960s, the original 7400-series integrated circuits were introduced by Texas Instruments with the prefix "SN" to create the name SN74xx. Due to the popularity of these parts, other manufacturers released pin-to-pin compatible logic devices and kept the 7400 sequence number as an aid to identification of compatible parts.

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