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A metal gate, in the context of a lateral metal–oxide–semiconductor (MOS) stack, is the gate electrode separated by an oxide from the transistor's channel – the gate material is made from a metal. In most MOS transistors since about the mid-1970s, the "M" for metal has been replaced by polysilicon, but the name remained.
After early experimentation with different gate materials using aluminum, molybdenum and amorphous silicon, the semiconductor industry almost universally adopted self-aligned gates made with polycrystalline silicon (poly-silicon), the so-called silicon-gate technology (SGT) or "self-aligned silicon-gate" technology, which had many additional ...
MOSFET, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).. The MOSFET (metal–oxide–semiconductor field-effect transistor) [1] is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.
The R-pulled circuit acts like a NOR gate that sinks OUT to the GND. As an example, here is a NOR gate implemented in schematic NMOS. If either input A or input B is high (logic 1, = True), the respective MOS transistor acts as a very low resistance between the output and the negative supply, forcing the output to be low (logic 0, = False).
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