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JLT is a nanowire-based transistor that has no gate junction. [1] (Even MOSFET has a gate junction, although its gate is electrically insulated from the controlled region.) Junctions are difficult to fabricate, and, because they are a significant source of current leakage, they waste significant power and heat.
Charge trapping behavior and tunable surface governed transport properties of SiNWs render this category of nanostructures of interest towards use as metal insulator semiconductors and field effect transistors, [8] where the silicon nanowire is the main channel of the FET which connect the source to the drain terminal, facilitating electron ...
Atomistic simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45V. Nanowires have been proposed for use as MOSFETs (MOS field-effect transistors).
The SB-FET (Schottky-barrier field-effect transistor) is a field-effect transistor with metallic source and drain contact electrodes, which create Schottky barriers at both the source-channel and drain-channel interfaces. [64] [65] The GFET is a highly sensitive graphene-based field effect transistor used as biosensors and chemical sensors.
A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate ...
In 1987, an IBM research team led by Bijan Davari demonstrated a metal–oxide–semiconductor field-effect transistor (MOSFET) with a 10 nm gate oxide thickness, using tungsten-gate technology. [12] Multi-gate MOSFETs enabled scaling below 20 nm gate length, starting with the FinFET (fin field-effect transistor), a three-dimensional, non ...
This field penetration alters the conductivity of the semiconductor near its surface, and is called the field effect. The field effect underlies the operation of the Schottky diode and of field-effect transistors, notably the MOSFET, the JFET and the MESFET. [1]
The tunnel field-effect transistor (TFET) is an experimental type of transistor. Even though its structure is very similar to a metal–oxide–semiconductor field-effect transistor ( MOSFET ), the fundamental switching mechanism differs, making this device a promising candidate for low power electronics .
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