Search results
Results from the WOW.Com Content Network
Negative resistance (voltage controlled) oscillator: Since VCNR ("N" type) devices require a low impedance bias and are stable for load impedances less than r, [103] the ideal oscillator circuit for this device has the form shown at top right, with a voltage source V bias to bias the device into its negative resistance region, and parallel ...
A tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki and Yuriko Kurose when working at Tokyo Tsushin Kogyo, now known as Sony.
The current–voltage characteristic often exhibits negative differential resistance regions. All types of tunneling diodes make use of quantum mechanical tunneling. Characteristic to the current–voltage relationship of a tunneling diode is the presence of one or more negative differential resistance regions, which enables many unique ...
The negative differential resistance, combined with the timing properties of the intermediate layer, is responsible for the diode's largest use: in electronic oscillators at microwave frequencies and above. A microwave oscillator can be created simply by applying a DC voltage to bias the device into its negative resistance region. In effect ...
The electronic symbol for a frequency-dependent negative resistor. The symbol is intended to evoke a double capacitor. A frequency-dependent negative resistor (FDNR) is a circuit element that exhibits a purely real negative resistance −1/(ω 2 kC) that decreases in magnitude at a rate of −40 dB per decade.
A negative impedance converter (NIC) is a simple op amp circuit that has negative resistance. Another implementation uses one negative impedance converter to create the negative resistance characteristic, and a diode-resistor network to create the nonlinear characteristic.
The negative resistance of the screen grid cancels the positive resistance of the tuned circuit, causing oscillations. As in the dynatron oscillator the control grid can be used to adjust the negative resistance. Since the transitron oscillator didn't depend on secondary emission it was far more reliable than the dynatron.
Negative resistance oscillations in bulk semiconductors had been observed in the laboratory by J. B. Gunn in 1962, [3] and were thus named the "Gunn effect", but physicist Herbert Kroemer pointed out in 1964 that Gunn's observations could be explained by the RWH theory. [4]