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The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. [1] [2] It is designed for low electric current and power and medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3904 NPN transistor. [3]
The 2N2907 is a commonly available PNP bipolar junction transistor used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds.
A typical use of these transistors is as a switch for moderate voltages and currents, including as drivers for small lamps, motors, and relays. [1] In switching circuits, these FETs can be used much like bipolar junction transistors, but have some advantages: high input impedance of the insulated gate means almost no gate current is required
The output is usually connected to an external pull-up resistor, which pulls the output voltage to the resistor's supply voltage when the transistor is off. For PNP open collector outputs, the emitter of the PNP transistor is internally connected to the positive voltage rail, so the collector outputs a high voltage when the transistor is on or ...
The BC548 is a part of a family of NPN and PNP epitaxial silicon transistors that originated with the metal-cased BC108 family of transistors.The BC548 is the modern plastic-packaged BC108; [6] the BC548 article at the Radiomuseum website [7] describes the BC548 as a successor to the BC238 and differing from the BC108 in only the shape of the package.
The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. [1] [2] [3] It is designed for low current and power, medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3906 PNP transistor. Both types were registered by Motorola Semiconductor in ...
A single common-emitter pnp-type transistor can operate correctly in saturation mode, with only ≈0.25 V voltage drop, but also with impractically high base currents. [29] A compound pnp-type transistor does not need as much drive current, but it requires at least a 1 V voltage drop. [29]
The current source transistor may be replaced with a resistor from the positive supply to the base of the inverter transistor, since discrete resistors are smaller and less expensive than discrete transistors. Similarly, the merged PNP current injector transistor and the NPN inverter transistor can be implemented as separate discrete components.