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A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device. The name "silicon controlled rectifier" is General Electric 's trade name for a type of thyristor .
Physically, rectifiers take a number of forms, including vacuum tube diodes, wet chemical cells, mercury-arc valves, stacks of copper and selenium oxide plates, semiconductor diodes, silicon-controlled rectifiers and other silicon-based semiconductor switches.
The silicon controlled rectifier (SCR) or thyristor proposed by William Shockley in 1950 and championed by Moll and others at Bell Labs was developed in 1956 by power engineers at General Electric (GE), led by Gordon Hall and commercialized by GE's Frank W. "Bill" Gutzwiller.
Thyratrons have been replaced in most low and medium-power applications by corresponding semiconductor devices known as thyristors (sometimes called silicon-controlled rectifiers, or SCRs) and triacs. However, switching service requiring voltages above 20 kV and involving very short risetimes remains within the domain of the thyratron.
Up to 3000 amperes and 5000 volts in a single silicon device. High voltage requires multiple series silicon devices. Silicon-controlled rectifier (SCR) This semi-controlled device turns on when a gate pulse is present and the anode is positive compared to the cathode. When a gate pulse is present, the device operates like a standard diode.
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In 1956, the silicon controlled rectifier (SCR) was introduced by General Electric, greatly increasing the range of power electronics applications. [3] By the 1960s, the improved switching speed of bipolar junction transistors had allowed for high frequency DC/DC converters. R. D. Middlebrook made important contributions to power electronics.
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