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Bipolar transistors have four distinct regions of operation, defined by BJT junction biases: [9] [10] Forward-active (or simply active) The base–emitter junction is forward biased and the base–collector junction is reverse biased. Most bipolar transistors are designed to afford the greatest common-emitter current gain, β F, in
Early, is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage. A greater reverse bias across the collector–base junction, for example, increases the collector–base depletion width, thereby decreasing the width of the charge carrier portion of the ...
A load line diagram, illustrating an operating point in the transistor's active region.. Biasing is the setting of the DC operating point of an electronic component. For bipolar junction transistors (BJTs), the operating point is defined as the steady-state DC collector-emitter voltage and the collector current with no input signal applied.
An avalanche transistor is a bipolar junction ... while for the same device working in the active region, basic transistor ... is the collector-base reverse ...
For a bipolar junction transistor amplifier, this requirement means that the transistor must stay in the active mode, and avoid cut-off or saturation. The same requirement applies to a MOSFET amplifier, although the terminology differs a little: the MOSFET must stay in the active mode, and avoid cutoff or ohmic operation. [citation needed]
The IGBT accounts for 27% of the power transistor market, second only to the power MOSFET (53%), and ahead of the RF amplifier (11%) and bipolar junction transistor (9%). [35] The IGBT is widely used in consumer electronics , industrial technology , the energy sector , aerospace electronic devices, and transportation .
For a device that makes use of the secondary breakdown effect see Avalanche transistor. Secondary breakdown is a failure mode in bipolar power transistors. In a power transistor with a large junction area, under certain conditions of current and voltage, the current concentrates in a small spot of the base-emitter junction.
Figure 1: Basic NPN common collector circuit (neglecting biasing details).. In electronics, a common collector amplifier (also known as an emitter follower) is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies, typically used as a voltage buffer.
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