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An equivalent oxide thickness usually given in nanometers (nm) is the thickness of silicon oxide film that provides the same electrical performance as that of a high-κ material being used. The term is often used when describing field effect transistors , which rely on an electrically insulating pad of material between a gate and a doped ...
It is convenient to denote cavity frequencies with a complex number ~ = /, where = (~) is the angular resonant frequency and = (~) is the inverse of the mode lifetime. Cavity perturbation theory has been initially proposed by Bethe-Schwinger in optics [1], and Waldron in the radio frequency domain. [2]
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In dielectric problems, there are twice as many unknowns - J & M - and also twice as many equations to enforce - continuity of tangential E & H - at the dielectric interfaces. [ 3 ] For PEC structures, the electric field E is related to the vector magnetic potential A via the well-known relation:
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The dimension of a DRA is the order of , where is the free-space wavelength and is the dielectric constant of the resonator material. Thus, by choosing a high value of ε r {\displaystyle \varepsilon _{r}} ( ε r ≈ 10 − 100 {\displaystyle \varepsilon _{r}\approx 10-100} ), the size of the DRA can be significantly reduced.
Flexoelectricity is a property of a dielectric material where there is coupling between electrical polarization and a strain gradient. This phenomenon is closely related to piezoelectricity, but while piezoelectricity refers to polarization due to uniform strain, flexoelectricity specifically involves polarization due to strain that varies from point to point in the material.