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A memristor (/ ˈ m ɛ m r ɪ s t ər /; a portmanteau of memory resistor) is a non-linear two-terminal electrical component relating electric charge and magnetic flux linkage.It was described and named in 1971 by Leon Chua, completing a theoretical quartet of fundamental electrical components which also comprises the resistor, capacitor and inductor.
The Caravelli-Traversa-Di Ventra equation (CTDV) is a closed-form equation to the evolution of networks of memristors.It was derived by Francesco Caravelli (Los Alamos National Laboratory), Fabio L. Traversa (Memcomputing Inc.) and Massimiliano Di Ventra (UC San Diego) to study the exact evolution of complex circuits made of resistances with memory (memristors).
While the memristor is defined in terms of a two-terminal circuit element, there was an implementation of a three-terminal device called a memistor developed by Bernard Widrow in 1960. Memistors formed basic components of a neural network architecture called ADALINE developed by Widrow. [1] [2] The memistor was also used in MADALINE.
Stan Williams of HP Labs also argued that ReRAM was a memristor. [21] However, others challenged this terminology and the applicability of memristor theory to any physically realizable device is open to question. [22] [23] [24] Whether redox-based resistively switching elements (ReRAM) are covered by the current memristor theory is disputed. [25]
The fourth passive element, the memristor, was proposed by Leon Chua in a 1971 paper, but a physical component demonstrating memristance was not created until thirty-seven years later. It was reported on April 30, 2008, that a working memristor had been developed by a team at HP Labs led by scientist R. Stanley Williams.
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Often the isolation capabilities are inferior to the use of transistors if the on/off ratio for the selector is not sufficient, limiting the ability to operate very large arrays in this architecture. Chalcogenide-based threshold switches have been demonstrated as a viable selector for high-density PCM arrays [22]