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Thus, DDR2 memory must be operated at twice the data rate to achieve the same latency. Another cost of the increased bandwidth is the requirement that the chips are packaged in a more expensive and difficult to assemble BGA package as compared to the TSSOP package of the previous memory generations such as DDR SDRAM and SDR SDRAM .
Column address strobe latency, also called CAS latency or CL, ... DDR2-800 800 MT/s 1.250 ns 400 MHz 2.500 ns 6 15.00 ns 18.75 ns 23.75 ns 5 12.50 ns
JEDEC has set standards for the data rates of DDR SDRAM, divided into two parts. ... CAS latency (CL), clock cycle time ... DDR2-800 200 5 400 800 6400 DDR2-1066
What determines absolute latency (and thus system performance) is determined by both the timings and the memory clock frequency. When translating memory timings into actual latency, it is important to note that timings are in units of clock cycles, which for double data rate memory is half the speed of the commonly quoted transfer rate. Without ...
Any value may be programmed, but the SDRAM will not operate correctly if it is too low. At higher clock rates, the useful CAS latency in clock cycles naturally increases. 10–15 ns is 2–3 cycles (CL2–3) of the 200 MHz clock of DDR-400 SDRAM, CL4-6 for DDR2-800, and CL8-12 for DDR3-1600.
1GB 2Rx4 PC2-3200P-333-11-D2 is a 1 GB DDR2 Registered DIMM, with address/command parity function, using 2 ranks of x4 SDRAMs operational to PC2-3200 performance with CAS Latency = 3, tRCD = 3, tRP = 3, using JEDEC SPD revision 1.1, raw card reference design file D revision 2 used for the assembly.
DDR2 and DDR3 increased this factor to 4× and 8×, respectively, delivering 4-word and 8-word bursts over 2 and 4 clock cycles, respectively. The internal access rate is mostly unchanged (200 million per second for DDR-400, DDR2-800 and DDR3-1600 memory), but each access transfers more data.
DDR2-800, PC2-6400 200 MHz 400 MHz 800 MT/s 6.4 GB/s DDR3-1600, PC3-12800 200 MHz ... and timing parameters such as CAS latency are specified in clock cycles.
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