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  2. Dynamic random-access memory - Wikipedia

    en.wikipedia.org/wiki/Dynamic_random-access_memory

    The top of the capacitor is connected to the access transistor's drain terminal via a polysilicon strap (Kenner, pp. 42–44). A trench capacitor's depth-to-width ratio in DRAMs of the mid-2000s can exceed 50:1 (Jacob, p. 357). Trench capacitors have numerous advantages.

  3. Semiconductor memory - Wikipedia

    en.wikipedia.org/wiki/Semiconductor_memory

    The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory (such as EPROM, EEPROM and flash memory) uses floating-gate memory cells, which consist of a single floating-gate transistor per ...

  4. Ferroelectric RAM - Wikipedia

    en.wikipedia.org/wiki/Ferroelectric_RAM

    Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory .

  5. Memory cell (computing) - Wikipedia

    en.wikipedia.org/wiki/Memory_cell_(computing)

    The two most common types of DRAM memory cells since the 1980s have been trench-capacitor cells and stacked-capacitor cells. [25] Trench-capacitor cells are where holes (trenches) are made in a silicon substrate, whose side walls are used as a memory cell, whereas stacked-capacitor cells are the earliest form of three-dimensional memory (3D ...

  6. Deep reactive-ion etching - Wikipedia

    en.wikipedia.org/wiki/Deep_reactive-ion_etching

    in DRAM memory circuits, capacitor trenches may be 10–20 μm deep, in MEMS, DRIE is used for anything from a few micrometers to 0.5 mm. in irregular chip dicing, DRIE is used with a novel hybrid soft/hard mask to achieve sub-millimeter etching to dice silicon dies into lego-like pieces with irregular shapes. [7] [8] [9]

  7. Shallow trench isolation - Wikipedia

    en.wikipedia.org/wiki/Shallow_trench_isolation

    Shallow trench isolation (STI), also known as box isolation technique, is an integrated circuit feature which prevents electric current leakage between adjacent semiconductor device components. STI is generally used on CMOS process technology nodes of 250 nanometers and smaller.

  8. MAX232 - Wikipedia

    en.wikipedia.org/wiki/MAX232

    MAX232 chip in DIP-16 package The die of a MAX232 MAX232 pinout: Red: power, Yellow: charge pump capacitors, Blue: outputs, Green: inputs, Pins 9–12: TTL/CMOS I/O voltages. The MAX232 is an integrated circuit by Maxim Integrated Products, now a subsidiary of Analog Devices, that converts signals from a TIA-232 (RS-232) serial port to signals suitable for use in TTL-compatible digital logic ...

  9. KEMET Corporation - Wikipedia

    en.wikipedia.org/wiki/KEMET_Corporation

    In 1958, KEMET changed its market focus to the tantalum capacitor. In 1969, the company entered the market of ceramic capacitors. [1] In 1990, KEMET Electronics Corporation was acquired from Union Carbide and after two years, the company went public on the New York Stock Exchange under the symbol KEM. This ended all ties with Union Carbide. [1]

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