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IEEE 200-1975 or "Standard Reference Designations for Electrical and Electronics Parts and Equipments" is a standard that was used to define referencing naming systems for collections of electronic equipment. IEEE 200 was ratified in 1975. The IEEE renewed the standard in the 1990s, but withdrew it from active support shortly thereafter.
The Smith chart (sometimes also called Smith diagram, Mizuhashi chart (水橋チャート), Mizuhashi–Smith chart (水橋スミスチャート), [1] [2] [3] Volpert–Smith chart (Диаграмма Вольперта—Смита) [4] [5] or Mizuhashi–Volpert–Smith chart) is a graphical calculator or nomogram designed for electrical and electronics engineers specializing in radio ...
The codes given in the chart below usually tell the length and width of the components in tenths of millimeters or hundredths of inches. For example, a metric 2520 component is 2.5 mm by 2.0 mm which corresponds roughly to 0.10 inches by 0.08 inches (hence, imperial size is 1008).
A diode intended for regular operation in the reverse, avalanche breakdown, mode. Used as a voltage reference, noise source, and in certain classes of microwave oscillator device. average rectified value The average value of an alternating current waveform, taking the absolute value of the waveform. The average value is generally different from ...
QBD is the term applied to the charge-to-breakdown measurement of a semiconductor device. It is a standard destructive test method used to determine the quality of gate oxides in MOS devices. It is equal to the total charge passing through the dielectric layer (i.e. electron or hole fluence multiplied by the elementary charge) just before failure.
These parts are prefixed with 54 instead of 74 in the part number. [1] A short-lived 64 prefix on Texas Instruments parts indicated an industrial temperature range; this prefix had been dropped from the TI literature by 1973. Most recent 7400-series parts are fabricated in CMOS or BiCMOS technology rather than TTL.
Time-dependent gate oxide breakdown (or time-dependent dielectric breakdown, TDDB) is a kind of transistor aging, a failure mechanism in MOSFETs, when the gate oxide breaks down as a result of long-time application of relatively low electric field (as opposed to immediate breakdown, which is caused by strong electric field).
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