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SCR 4-layer (p-n-p-n) diagram. A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device.The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor.
A rectifier used in high-voltage direct current (HVDC) power transmission systems and industrial processing between about 1909 to 1975 is a mercury-arc rectifier or mercury-arc valve. The device is enclosed in a bulbous glass vessel or large metal tub.
The first letter represents the semiconductor material used for the component (A = germanium and B = silicon) and the second letter represents the general function of the part (for diodes, A = low-power/signal, B = variable capacitance, X = multiplier, Y = rectifier and Z = voltage reference); for example:
Bridge rectifier (four diodes in a package) often changed to "D" for diode BT, BAT: Battery or battery holder: often shortened to "B" C: Capacitor: CB: Circuit breaker: CN: Capacitor network: may be simplified to "C" for capacitor D, CR: Diode (all types, including LED), thyristor "D" is preferred for various types of diodes DL: Delay line: DN ...
High voltages inputted to every OR gate are reduced by V F (~0.6 V in silicon, ~0.3 V in germanium), while low voltages inputted to every AND gate are raised by V F. Source resistance A voltage source's output resistance and the subsequent gate's pull-up/down resistor form a voltage divider that weakens voltage levels. This decreases high ...
Common circuit diagram symbols (US ANSI symbols) An electronic symbol is a pictogram used to represent various electrical and electronic devices or functions, such as wires, batteries, resistors, and transistors, in a schematic diagram of an electrical or electronic circuit. These symbols are largely standardized internationally today, but may ...
Band diagram for metal-semiconductor junction at zero bias (equilibrium). Shown is the graphical definition of the Schottky barrier height, Φ B, for an n-type semiconductor as the difference between the interfacial conduction band edge E C and Fermi level E F.
TRIACs are a subset of thyristors (analogous to a relay in that a small voltage and current can control a much larger voltage and current) and are related to silicon controlled rectifiers (SCRs). TRIACs differ from SCRs in that they allow current flow in both directions, whereas an SCR can only conduct current in a single direction.
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