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  2. Diode logic - Wikipedia

    en.wikipedia.org/wiki/Diode_logic

    There is also a recovery concern: a diode's current will not decrease immediately when switching from forward-biased to reverse-biased, because discharging its stored charge takes a finite amount of time (t rr or reverse recovery time). [1] In a diode OR gate, if two or more of the inputs are high and one switches to low, recovery issues will ...

  3. Body image disturbance - Wikipedia

    en.wikipedia.org/wiki/Body_image_disturbance

    Body image disturbance (BID) is a common symptom in patients with eating disorders and is characterized by an altered perception of one's own body.. The onset is mainly attributed to patients with anorexia nervosa who persistently tend to subjectively discern themselves as average or overweight despite adequate, clinical grounds for a classification of being considerably or severely ...

  4. Step recovery diode - Wikipedia

    en.wikipedia.org/wiki/Step_recovery_diode

    In electronics, a step recovery diode (SRD, snap-off diode or charge-storage diode or memory varactor [a]) is a semiconductor junction diode with the ability to generate extremely short pulses. It has a variety of uses in microwave (MHz to GHz range) electronics as pulse generator or parametric amplifier .

  5. Insulated-gate bipolar transistor - Wikipedia

    en.wikipedia.org/wiki/Insulated-gate_bipolar...

    The penalty isn't overly severe because at higher voltages, where IGBT usage dominates, discrete diodes have a significantly higher performance than the body diode of a MOSFET. The reverse bias rating of the N-drift region to collector P+ diode is usually only of tens of volts, so if the circuit application applies a reverse voltage to the IGBT ...

  6. Transient-voltage-suppression diode - Wikipedia

    en.wikipedia.org/wiki/Transient-voltage...

    A transient-voltage-suppression diode can respond to over-voltages faster than other common over-voltage protection components such as varistors or gas discharge tubes. The actual clamping occurs in roughly one picosecond , but in a practical circuit the inductance of the wires leading to the device imposes a higher limit.

  7. JFET - Wikipedia

    en.wikipedia.org/wiki/JFET

    Constriction of the conducting channel is accomplished using the field effect: a voltage between the gate and the source is applied to reverse bias the gate-source pn-junction, thereby widening the depletion layer of this junction (see top figure), encroaching upon the conducting channel and restricting its cross-sectional area. The depletion ...

  8. Bride and Groom Can't Agree on Wedding Plans So They've ... - AOL

    www.aol.com/bride-groom-cant-agree-wedding...

    A Reddit user said her sister-in-law and future brother-in-law are planning "his and hers" weddings — and expect their family members to attend both

  9. Shockley diode - Wikipedia

    en.wikipedia.org/wiki/Shockley_diode

    It is a PNPN diode with alternating layers of P-type and N-type material. It is equivalent to a thyristor with a disconnected gate. Shockley diodes were manufactured and marketed by Shockley Semiconductor Laboratory in the late 1950s. The Shockley diode has a negative resistance characteristic. [1] It was largely superseded by the diac.