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  2. Drain-induced barrier lowering - Wikipedia

    en.wikipedia.org/wiki/Drain-induced_barrier_lowering

    As drain voltage is increased, the depletion region of the p-n junction between the drain and body increases in size and extends under the gate, so the drain assumes a greater portion of the burden of balancing depletion region charge, leaving a smaller burden for the gate. As a result, the charge present on the gate retains charge balance by ...

  3. Subthreshold conduction - Wikipedia

    en.wikipedia.org/wiki/Subthreshold_conduction

    Subthreshold leakage in an nFET. Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage.

  4. Depletion and enhancement modes - Wikipedia

    en.wikipedia.org/wiki/Depletion_and_enhancement...

    Top: source, bottom: drain, left: gate, right: bulk. Voltages that lead to channel formation are not shown. In field-effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an on state or an off state at zero gate–source voltage.

  5. Wired logic connection - Wikipedia

    en.wikipedia.org/wiki/Wired_logic_connection

    See also: Diode logic § Active-high AND logic gate Open-collector buffers connected as wired AND.. The wired AND connection is a form of AND gate.When using open collector or similar outputs (which can be identified by the ⎐ symbol in schematics), wired AND only requires a pull up resistor on the shared output wire.

  6. Open collector - Wikipedia

    en.wikipedia.org/wiki/Open_collector

    An nMOS open drain output connects to ground when a high voltage is applied to the MOSFET's gate, or presents a high impedance when a low voltage is applied to the gate. The voltage in this high impedance state would be floating (undefined) because the MOSFET is not conducting, which is why nMOS open drain outputs require a pull-up resistor ...

  7. Channel length modulation - Wikipedia

    en.wikipedia.org/wiki/Channel_length_modulation

    Channel length modulation (CLM) is an effect in field effect transistors, a shortening of the length of the inverted channel region with increase in drain bias for large drain biases. The result of CLM is an increase in current with drain bias and a reduction of output resistance. It is one of several short-channel effects in MOSFET scaling.

  8. Drain-waste-vent system - Wikipedia

    en.wikipedia.org/wiki/Drain-waste-vent_system

    A sewer pipe is normally at neutral air pressure compared to the surrounding atmosphere.When a column of waste water flows through a pipe, it compresses air ahead of it in the system, creating a positive pressure that must be released so it does not push back on the waste stream and downstream traps, slow drainage, and induce potential clogs.

  9. Common drain - Wikipedia

    en.wikipedia.org/wiki/Common_drain

    In electronics, a common-drain amplifier, also known as a source follower, is one of three basic single-stage field-effect transistor (FET) amplifier topologies, typically used as a voltage buffer. In this circuit (NMOS) the gate terminal of the transistor serves as the signal input, the source is the output, and the drain is common to both ...