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ZnO creates one of the most diverse range of nanostructures, and there is a great amount of research on different synthesis routes of various ZnO nanostructures. [1] The most common methods to synthesise ZnO structures is using chemical vapor deposition (CVD), which is best used to form nanowires and comb or tree-like structures.
ZnO is a wide-bandgap semiconductor with an energy gap of 3.37 eV at room temperature. [1] ZnO nanoparticles are believed to be one of the three most produced nanomaterials, along with titanium dioxide nanoparticles and silicon dioxide nanoparticles. [2] [3] [4] The most common use of ZnO nanoparticles is in sunscreen.
Nanowire lasers can be grown site-selectively on Si/SOI wafers with conventional MBE techniques, allowing for pristine structural quality without defects. Nanowire lasers using the group-III nitride and ZnO materials systems have been demonstrated to emit in the visible and ultraviolet, however infrared at the 1.3–1.55 μm is important for telecommunication bands. [3]
Molecular-beam epitaxy takes place in high vacuum or ultra-high vacuum (10 −8 –10 −12 Torr).The most important aspect of an MBE process is the deposition rate (typically less than 3,000 nm per hour) that allows the films to grow epitaxially (in layers on top of the existing crystal).
During VLS whisker growth, the rate at which whiskers grow is dependent on the whisker diameter: the larger the whisker diameter, the faster the nanowire grows axially. This is because the supersaturation of the metal-alloy catalyst ( Δ μ {\displaystyle \Delta \mu } ) is the main driving force for nanowhisker growth and decreases with ...
Most synthesis techniques use a bottom-up approach. Initial synthesis via either method may often be followed by a nanowire thermal treatment step, often involving a form of self-limiting oxidation, to fine tune the size and aspect ratio of the structures. [7] After the bottom-up synthesis, nanowires can be integrated using pick-and-place ...
Zinc oxide (ZnO) nanorod, also known as nanowire, has a direct bandgap energy of 3.37 eV, which is similar to that of GaN, and it has an excitation binding energy of 60 meV. The optical bandgap of ZnO nanorod can be tuned by changing the morphology , composition, size etc.
The superconducting nanowire single-photon detector (SNSPD or SSPD) is a type of optical and near-infrared single-photon detector based on a current-biased superconducting nanowire. [1] It was first developed by scientists at Moscow State Pedagogical University and at the University of Rochester in 2001.