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The avalanche photodiode was invented by Japanese engineer Jun-ichi Nishizawa in 1952. [1] However, study of avalanche breakdown, micro-plasma defects in silicon and germanium and the investigation of optical detection using p-n junctions predate this patent.
In electronics, an avalanche diode is a diode (made from silicon or other semiconductor) that is designed to experience avalanche breakdown at a specified reverse bias voltage. The junction of an avalanche diode is designed to prevent current concentration and resulting hot spots, so that the diode is undamaged by the breakdown.
Commercial single-photon avalanche diode module for optical photons. A single-photon avalanche diode (SPAD), also called Geiger-mode avalanche photodiode [1] (G-APD or GM-APD [2]) is a solid-state photodetector within the same family as photodiodes and avalanche photodiodes (APDs), while also being fundamentally linked with basic diode behaviours.
The wide intrinsic region makes the PIN diode an inferior rectifier (one typical function of a diode), but it makes it suitable for attenuators, fast switches, photodetectors, and high-voltage power electronics applications. The PIN photodiode was invented by Jun-Ichi Nishizawa and his colleagues in 1950. It is a semiconductor device.
A photodiode is a PIN structure or ... Avalanche photodiodes are photodiodes with structure ... The CMOS sensor with PPD technology was further advanced and refined ...
In solid-state electronics, silicon photomultipliers (SiPMs) are single-photon-sensitive devices based on pixels of single-photon avalanche diodes (SPADs) implemented on common silicon substrate. [1] The dimension of each single avalanche diode can vary from 10 to 100 micrometres , with a typical density of up to 1,000 pixels/mm 2 .
The PIN photodiode was also invented by Nishizawa and his colleagues in 1950. [4] In 1952, he invented the avalanche photodiode. [5] He then invented a solid-state maser in 1955. [5] This was followed by his proposal for a semiconductor optical maser in 1957, a year before Schawlow and Townes's first paper on optical masers. [5] [6] [7]
Photodiodes can be further categorized into: a. PIN Photodiodes: These photodiodes have an additional intrinsic (I) region between the P and N regions, which extends the depletion region and improves the device's performance. b. Schottky Photodiodes: In Schottky photodiodes, a metal-semiconductor junction is used instead of a PN junction.