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Isotropic etching. Isotropic etching is a method commonly used in semiconductors to remove material from a substrate via a chemical process using an etchant substance. The etchant may be in liquid-, gas- or plasma -phase, [1] although liquid etchants such as buffered hydrofluoric acid (BHF) for silicon dioxide etching are more often used.
Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module in fabrication, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which ...
Anisotropy (/ ˌænaɪˈsɒtrəpi, ˌænɪ -/) is the structural property of non-uniformity in different directions, as opposed to isotropy. An anisotropic object or pattern has properties that differ according to direction of measurement. For example, many materials exhibit very different physical or mechanical properties when measured along ...
Due to the mostly vertical delivery of reactive ions, reactive-ion etching can produce very anisotropic etch profiles, which contrast with the typically isotropic profiles of wet chemical etching. Etch conditions in an RIE system depend strongly on the many process parameters, such as pressure, gas flows, and RF power.
Deep reactive-ion etching. Deep reactive-ion etching (DRIE) is a special subclass of reactive-ion etching (RIE). It enables highly anisotropic etch process used to create deep penetration, steep-sided holes and trenches in wafers /substrates, typically with high aspect ratios. It was developed for microelectromechanical systems (MEMS), which ...
Metal Assisted Chemical Etching (also known as MACE) is the process of wet chemical etching of semiconductors (mainly silicon) with the use of a metal catalyst, usually deposited on the surface of a semiconductor in the form of a thin film or nanoparticles. The semiconductor, covered with the metal is then immersed in an etching solution ...
Isotropy. In physics and geometry, isotropy (from Ancient Greek ἴσος (ísos) 'equal' and τρόπος (trópos) 'turn, way') is uniformity in all orientations. Precise definitions depend on the subject area. Exceptions, or inequalities, are frequently indicated by the prefix a- or an-, hence anisotropy.
A plasma etcher, or etching tool, is a tool used in the production of semiconductor devices. A plasma etcher produces a plasma from a process gas, typically oxygen or a fluorine -bearing gas, using a high frequency electric field, typically 13.56 MHz. A silicon wafer is placed in the plasma etcher, and the air is evacuated from the process ...