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An extrinsic semiconductor that has been doped with electron donor atoms is called an n-type semiconductor, because the majority of charge carriers in the crystal are negative electrons. An electron acceptor dopant is an atom which accepts an electron from the lattice, creating a vacancy where an electron should be called a hole which can move ...
Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as boron and antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.
The carrier density is important for semiconductors, where it is an important quantity for the process of chemical doping. Using band theory, the electron density, is number of electrons per unit volume in the conduction band. For holes, is the number of holes per unit volume in the valence band.
The EC-SLI experiment has been successfully involved in determining the lattice locations of short-lived isotopes in a variety of semiconductor materials. [8] The focus of emission channeling experiments at ISOLDE are investigations into lattice locations of transition metal probes, and p-type doping using short-lived alkaline earth probes or ...
Gallium nitride (Ga N) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure.
Absorption is the active process in photodiodes, solar cells and other semiconductor photodetectors, while stimulated emission is the principle of operation in laser diodes. Besides light excitation, carriers in semiconductors can also be generated by an external electric field, for example in light-emitting diodes and transistors.
Semiconductor characterization techniques are used to characterize a semiconductor material or device (p–n junction, Schottky diode, solar cell, etc.).Some examples of semiconductor properties that could be characterized include the depletion width, carrier concentration, carrier generation and recombination rates, carrier lifetimes, defect concentration, and trap states.
The optical absorption coefficient of lead tin telluride is typically ~750 cm −1 as compared to ~50 cm −1 for the extrinsic semiconductors such as doped silicon. [3] The higher optical coefficient value not only ensures higher sensitivity but also reduces the spacing required between individual detector elements to prevent optical cross ...