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The static qualifier differentiates SRAM from dynamic random-access memory (DRAM): SRAM will hold its data permanently in the presence of power, while data in DRAM decays in seconds and thus must be periodically refreshed. SRAM is faster than DRAM but it is more expensive in terms of silicon area and cost.
The two main types of volatile random-access semiconductor memory are static random-access memory (SRAM) and dynamic random-access memory (DRAM). Non-volatile RAM has also been developed [3] and other types of non-volatile memories allow random access for read operations, but either do not allow write operations or have other kinds of limitations.
To prevent this, DRAM requires an external memory refresh circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM) which
The first modern memory cells were introduced in 1964, when John Schmidt designed the first 64-bit p-channel MOS static random-access memory (SRAM). [15] [16] SRAM typically has six-transistor cells, whereas DRAM (dynamic random-access memory) typically has single-transistor cells.
Toshiba introduced bipolar DRAM memory cells for its Toscal BC-1411 electronic calculator in 1965. [22] [23] While it offered improved performance over magnetic-core memory, bipolar DRAM could not compete with the lower price of the then dominant magnetic-core memory. [24] MOS technology is the basis for modern DRAM.
Examples of volatile memory are dynamic random-access memory (DRAM) used for primary storage and static random-access memory (SRAM) used mainly for CPU cache. Most semiconductor memory is organized into memory cells each storing one bit (0 or 1).
The prefetch architecture takes advantage of the specific characteristics of memory accesses to DRAM. Typical DRAM memory operations involve three phases: bitline precharge, row access, column access. Row access is the heart of a read operation, as it involves the careful sensing of the tiny signals in DRAM memory cells; it is the slowest phase ...
The insight was the catalyst for DRAM — Dennard’s most important innovation. [3] In 1966 he invented the one transistor memory cell consisting of a transistor and a capacitor for which a patent was issued in 1968. [4] It became the basis for today's dynamic random-access memory (DRAM) and almost all other memory types such as SRAM and FLASH ...